| ชื่อเรื่อง | : | N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates |
| นักวิจัย | : | Ivana , Subramanian, Sujith , Owen, Man Hon Samuel , Tan, Kian Hua , Loke, Wan Khai , Wicaksono, Satrio , Yoon, Soon Fatt , Yeo, Yee-Chia |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | Ivana, Subramanian, S., Owen, M. H. S., Tan, K. H., Loke, W. K., Wicaksono, S., Yoon, S. F., & Yeo, Y. C. (2012). N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates. Applied Physics Express, 5(11). , http://hdl.handle.net/10220/12545 , http://dx.doi.org/10.1143/APEX.5.116502 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied physics express |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | InGaAs n-channel metal oxide semiconductor field-effect transistors (MOSFETs) were fabricated on germanium-on-insulator (GeOI) substrate for the first time. Integration of InGaAs on a GeOI substrate was achieved using a molecular beam epitaxy (MBE)-grown InAlAs graded buffer. The fabricated MOSFET, with a self-aligned Ni–InGaAs metallic source/drain, achieves good device characteristics. The normalized transconductance (Gm·tox) compares very well with reported data for InGaAs n-MOSFETs formed on bulk InP substrates, and is significantly higher than reported data for In0.53Ga0.47As n-MOSFETs fabricated on Si substrates using a similar growth technique. |
| บรรณานุกรม | : |
Ivana , Subramanian, Sujith , Owen, Man Hon Samuel , Tan, Kian Hua , Loke, Wan Khai , Wicaksono, Satrio , Yoon, Soon Fatt , Yeo, Yee-Chia . (2555). N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ivana , Subramanian, Sujith , Owen, Man Hon Samuel , Tan, Kian Hua , Loke, Wan Khai , Wicaksono, Satrio , Yoon, Soon Fatt , Yeo, Yee-Chia . 2555. "N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ivana , Subramanian, Sujith , Owen, Man Hon Samuel , Tan, Kian Hua , Loke, Wan Khai , Wicaksono, Satrio , Yoon, Soon Fatt , Yeo, Yee-Chia . "N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Ivana , Subramanian, Sujith , Owen, Man Hon Samuel , Tan, Kian Hua , Loke, Wan Khai , Wicaksono, Satrio , Yoon, Soon Fatt , Yeo, Yee-Chia . N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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