| ชื่อเรื่อง | : | Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications. |
| นักวิจัย | : | Zhou, H. P. , Wei, D. Y. , Xu, S. , Xiao, S. Q. , Xu, L. X. , Huang, S. Y. , Guo, Y. N. , Khan, S. , Xu, M. |
| คำค้น | : | - |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | Zhou, H. P., Wei, D. Y., Xu, S., Xiao, S. Q., Xu, L. X., Huang, S. Y., et al. (2012). Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications. Journal of Physics D: Applied Physics, 45(39). , http://hdl.handle.net/10220/12369 , http://dx.doi.org/10.1088/0022-3727/45/39/395401 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Journal of physics D: applied physics |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Hydrogenated silicon suboxide (SiOx : H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH4 + CO2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap, increased H content, lower conductivity and higher activation energy. The minority carrier lifetime in the SiOx : H-passivated p-type Si substrate is up to 428 µs with a reduced incubation layer at the interface. The associated surface recombination velocity is as low as 70 cm s−1. The passivation behaviour dominantly originates from the H-related chemical passivation. The passivation effect is also demonstrated by the excellent photovoltaic performance of the heterojunction solar cell with the SiOx : H-based passivation and emitter layers. |
| บรรณานุกรม | : |
Zhou, H. P. , Wei, D. Y. , Xu, S. , Xiao, S. Q. , Xu, L. X. , Huang, S. Y. , Guo, Y. N. , Khan, S. , Xu, M. . (2555). Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications..
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Zhou, H. P. , Wei, D. Y. , Xu, S. , Xiao, S. Q. , Xu, L. X. , Huang, S. Y. , Guo, Y. N. , Khan, S. , Xu, M. . 2555. "Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications.".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Zhou, H. P. , Wei, D. Y. , Xu, S. , Xiao, S. Q. , Xu, L. X. , Huang, S. Y. , Guo, Y. N. , Khan, S. , Xu, M. . "Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications.."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Zhou, H. P. , Wei, D. Y. , Xu, S. , Xiao, S. Q. , Xu, L. X. , Huang, S. Y. , Guo, Y. N. , Khan, S. , Xu, M. . Si surface passivation by SiOx : H films deposited by a low-frequency ICP for solar cell applications.. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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