| ชื่อเรื่อง | : | Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission |
| นักวิจัย | : | Liang, Y. Y. , Yoon, Soon Fatt , Ngo, C. Y. , Loke, Wan Khai , Fitzgerald, Eugene A. |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | Liang, Y. Y., Yoon, S. F., Ngo, C. Y., Loke, W. K., & Fitzgerald, E. A. (2012). Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission. Journal of Physics D: Applied Physics, 45(14), 145103-. , http://hdl.handle.net/10220/11368 , http://dx.doi.org/10.1088/0022-3727/45/14/145103 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Journal of physics D : applied physics |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | GaAs-based quantum dot (QD) systems, especially InAs/InGaAs/GaAs QDs, have demonstrated superior device performances as compared with higher dimensional systems. However, to realize high-speed optical interconnects for Si-based electronics, one will need to grow the QDs on Si substrates. While it is promising to integrate the InAs/InGaAs/GaAs QDs on Si with the use of germanium-on-insulator-on-silicon (GeOI) substrates, reported results exhibit bimodal QD sizes and double emission peaks, i.e. unsatisfactory for realistic applications. In this paper, we showed that with an optimized GaAs buffer, single-peak 1.33 µm room-temperature emission can be obtained from InAs/InGaAs/GaAs QDs on GeOI substrates. |
| บรรณานุกรม | : |
Liang, Y. Y. , Yoon, Soon Fatt , Ngo, C. Y. , Loke, Wan Khai , Fitzgerald, Eugene A. . (2555). Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liang, Y. Y. , Yoon, Soon Fatt , Ngo, C. Y. , Loke, Wan Khai , Fitzgerald, Eugene A. . 2555. "Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liang, Y. Y. , Yoon, Soon Fatt , Ngo, C. Y. , Loke, Wan Khai , Fitzgerald, Eugene A. . "Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Liang, Y. Y. , Yoon, Soon Fatt , Ngo, C. Y. , Loke, Wan Khai , Fitzgerald, Eugene A. . Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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