| ชื่อเรื่อง | : | High-responsivity modulation-doped AlGaAs/InGaAs thermopiles for uncooled IR-FPA utilizing integrated HEMT-MEMS technology |
| นักวิจัย | : | Abe, Masayuki , Abe, Yuki , Kogushi, Noriaki , Ang, Kian Siong , Hofstetter, René , Wang, Hong , Ng, Geok Ing |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | http://hdl.handle.net/10220/11332 , http://dx.doi.org/10.1109/LED.2012.2204399 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE electron device letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Novel thermopiles based on modulation-doped AlGaAs/InGaAs heterostructures are proposed and developed for the first time for uncooled IR focal plane array (FPA) image sensor application. The high responsivity R with the high-speed response time τare designed to be 4900 V/W with 110 μs. Based on integrated high-electron-mobility-transistor-microelectromechanical-system technology, the 32 × 32 matrix FPAs are fabricated to demonstrate its enhanced performance by blackbody measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled IR FPA applications. |
| บรรณานุกรม | : |
Abe, Masayuki , Abe, Yuki , Kogushi, Noriaki , Ang, Kian Siong , Hofstetter, René , Wang, Hong , Ng, Geok Ing . (2555). High-responsivity modulation-doped AlGaAs/InGaAs thermopiles for uncooled IR-FPA utilizing integrated HEMT-MEMS technology.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Abe, Masayuki , Abe, Yuki , Kogushi, Noriaki , Ang, Kian Siong , Hofstetter, René , Wang, Hong , Ng, Geok Ing . 2555. "High-responsivity modulation-doped AlGaAs/InGaAs thermopiles for uncooled IR-FPA utilizing integrated HEMT-MEMS technology".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Abe, Masayuki , Abe, Yuki , Kogushi, Noriaki , Ang, Kian Siong , Hofstetter, René , Wang, Hong , Ng, Geok Ing . "High-responsivity modulation-doped AlGaAs/InGaAs thermopiles for uncooled IR-FPA utilizing integrated HEMT-MEMS technology."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Abe, Masayuki , Abe, Yuki , Kogushi, Noriaki , Ang, Kian Siong , Hofstetter, René , Wang, Hong , Ng, Geok Ing . High-responsivity modulation-doped AlGaAs/InGaAs thermopiles for uncooled IR-FPA utilizing integrated HEMT-MEMS technology. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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