| ชื่อเรื่อง | : | Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry |
| นักวิจัย | : | Mangelinck, D. , Lee, Pooi See , Osipowitcz, T. , Pey, Kin Leong |
| คำค้น | : | DRNTU::Engineering::Materials. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2546 |
| อ้างอิง | : | Mangelinck, D., Lee, P. S., Osipowitcz, T., & Pey, K. L. (2004). Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 215(3-4), 495-500. , 0168-583X , http://hdl.handle.net/10220/10518 , http://dx.doi.org/10.1016/j.nimb.2003.08.040 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Nuclear instruments and methods in Physics research Section B: beam interactions with materials and atoms |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed. |
| บรรณานุกรม | : |
Mangelinck, D. , Lee, Pooi See , Osipowitcz, T. , Pey, Kin Leong . (2546). Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Mangelinck, D. , Lee, Pooi See , Osipowitcz, T. , Pey, Kin Leong . 2546. "Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Mangelinck, D. , Lee, Pooi See , Osipowitcz, T. , Pey, Kin Leong . "Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2546. Print. Mangelinck, D. , Lee, Pooi See , Osipowitcz, T. , Pey, Kin Leong . Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2546.
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