| ชื่อเรื่อง | : | Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate |
| นักวิจัย | : | Li, Y. S. , Lee, Pooi See , Pey, Kin Leong |
| คำค้น | : | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2547 |
| อ้างอิง | : | Li, Y. S., Lee, P. S., & Pey, K. L. (2004). Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate. Thin Solid Films, 462-463, 209-212. , 0040-6090 , http://hdl.handle.net/10220/10503 , http://dx.doi.org/10.1016/j.tsf.2004.05.025 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Thin solid films |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Ti/Co and Co/Ti bilayered systems were used for the formation of Co germanosilicide on polysilicon buffered poly-Si1−xGex (x=0.2, 0.3) gate stacks. In both cases, substantial Ge was found to segregate to the grain boundaries at the surface of the polycrystalline silicide (i.e., CoSiGe) films, resulting in a substantial degradation in the sheet resistance and a poor quality of the silicide films. It is shown that Ge is probably being expelled from the poly-SiGe grain and segregates to the grain boundaries during the annealing process, leading to the undesirable sheet resistance and poor film morphology observed from the Co germanosilicide films. |
| บรรณานุกรม | : |
Li, Y. S. , Lee, Pooi See , Pey, Kin Leong . (2547). Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Li, Y. S. , Lee, Pooi See , Pey, Kin Leong . 2547. "Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Li, Y. S. , Lee, Pooi See , Pey, Kin Leong . "Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2547. Print. Li, Y. S. , Lee, Pooi See , Pey, Kin Leong . Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2547.
|
ridm@nrct.go.th ระบบคลังข้อมูลงานวิจัยไทย รายการโปรดที่คุณเลือกไว้
