| ชื่อเรื่อง | : | Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| นักวิจัย | : | Kusuma, Damar Yoga , Lee, Pooi See |
| คำค้น | : | - |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | Kusuma, D. Y., & Lee, P. S. (2012). Ferroelectric Tunnel Junction Memory Devices made from Monolayers of Vinylidene Fluoride Oligomers. Advanced Materials, 24(30), 4163-4169. , 1521-4095 , http://hdl.handle.net/10220/10458 , http://dx.doi.org/10.1002/adma.201104476 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Advanced materials |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use. |
| บรรณานุกรม | : |
Kusuma, Damar Yoga , Lee, Pooi See . (2555). Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Kusuma, Damar Yoga , Lee, Pooi See . 2555. "Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Kusuma, Damar Yoga , Lee, Pooi See . "Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Kusuma, Damar Yoga , Lee, Pooi See . Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
|
