| ชื่อเรื่อง | : | Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes |
| นักวิจัย | : | Liu, Juqing , Yin, Zongyou , Cao, Xiehong , Zhao, Fei , Lin, Anping , Xie, Linghai , Fan, Qu-Li , Boey, Freddy Yin Chiang , Zhang, Hua , Huang, Wei |
| คำค้น | : | DRNTU::Engineering::Materials |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2553 |
| อ้างอิง | : | Liu, J., Yin, Z., Cao, X., Zhao, F., Lin, A., Xie, L., et al. (2010). Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes. ACS Nano, 4(7), 3987-3992. , 1936-0851 , http://hdl.handle.net/10220/8572 , http://dx.doi.org/10.1021/nn100877s |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | ACS nano |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current−voltage (I−V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (104−105) and low switching threshold voltage (0.5−1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device. |
| บรรณานุกรม | : |
Liu, Juqing , Yin, Zongyou , Cao, Xiehong , Zhao, Fei , Lin, Anping , Xie, Linghai , Fan, Qu-Li , Boey, Freddy Yin Chiang , Zhang, Hua , Huang, Wei . (2553). Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, Juqing , Yin, Zongyou , Cao, Xiehong , Zhao, Fei , Lin, Anping , Xie, Linghai , Fan, Qu-Li , Boey, Freddy Yin Chiang , Zhang, Hua , Huang, Wei . 2553. "Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, Juqing , Yin, Zongyou , Cao, Xiehong , Zhao, Fei , Lin, Anping , Xie, Linghai , Fan, Qu-Li , Boey, Freddy Yin Chiang , Zhang, Hua , Huang, Wei . "Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2553. Print. Liu, Juqing , Yin, Zongyou , Cao, Xiehong , Zhao, Fei , Lin, Anping , Xie, Linghai , Fan, Qu-Li , Boey, Freddy Yin Chiang , Zhang, Hua , Huang, Wei . Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2553.
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