| ชื่อเรื่อง | : | Analytical modeling of reservoir effect on electromigration in Cu interconnects |
| นักวิจัย | : | Gan, Zhenghao , Gusak, A. M. , Shao, W. , Chen, Zhong , Mhaisalkar, Subodh Gautam , Zaporozhets, T. , Tu, K. N. |
| คำค้น | : | DRNTU::Engineering::Materials |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2550 |
| อ้างอิง | : | Gan, Z., Gusak, A. M., Shao, W., Chen, Z., Mhaisalkar, S. G., Zaporozhets, T., et. al. (2007). Analytical modeling of reservoir effect on electromigration in Cu interconnects. Journal of materials research, 22(1), 152-156. , http://hdl.handle.net/10220/7709 , http://dx.doi.org/10.1557/jmr.2007.0001 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Journal of materials research |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model. |
| บรรณานุกรม | : |
Gan, Zhenghao , Gusak, A. M. , Shao, W. , Chen, Zhong , Mhaisalkar, Subodh Gautam , Zaporozhets, T. , Tu, K. N. . (2550). Analytical modeling of reservoir effect on electromigration in Cu interconnects.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Gan, Zhenghao , Gusak, A. M. , Shao, W. , Chen, Zhong , Mhaisalkar, Subodh Gautam , Zaporozhets, T. , Tu, K. N. . 2550. "Analytical modeling of reservoir effect on electromigration in Cu interconnects".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Gan, Zhenghao , Gusak, A. M. , Shao, W. , Chen, Zhong , Mhaisalkar, Subodh Gautam , Zaporozhets, T. , Tu, K. N. . "Analytical modeling of reservoir effect on electromigration in Cu interconnects."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2550. Print. Gan, Zhenghao , Gusak, A. M. , Shao, W. , Chen, Zhong , Mhaisalkar, Subodh Gautam , Zaporozhets, T. , Tu, K. N. . Analytical modeling of reservoir effect on electromigration in Cu interconnects. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2550.
|
ridm@nrct.go.th ระบบคลังข้อมูลงานวิจัยไทย รายการโปรดที่คุณเลือกไว้
