| ชื่อเรื่อง | : | Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si |
| นักวิจัย | : | Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Tang, L. J. |
| คำค้น | : | DRNTU::Engineering::Materials |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2549 |
| อ้างอิง | : | Tan, E. J., Pey, K. L., Chi, D. Z., Lee, P. S., & Tang, L. J. (2006). Improved Electrical Performance of Erbium Silicide Schottky Diodes formed by pre-RTA Amorphization of Si. IEEE Electron Device Letters, 27(2), 93-95. , http://hdl.handle.net/10220/8338 , http://dx.doi.org/10.1109/LED.2005.863142 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE electron device letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence of silicide-induced microstructural defects which are likely sources of trap states. A method to improve the ϕ_Beff and of the diodes utilizing in situ Ar plasma cleaning to induce a light amorphization of the Si(001) substrate is proposed. Even though the diodes formed in this way are less textured and have a poorer interface, they are free of silicide-induced microstructural defects, leading to an overall improvement in current transport and conduction properties which can be modeled using inhomogenous Schottky contact model. |
| บรรณานุกรม | : |
Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Tang, L. J. . (2549). Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Tang, L. J. . 2549. "Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Tang, L. J. . "Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print. Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Tang, L. J. . Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.
|
ridm@nrct.go.th ระบบคลังข้อมูลงานวิจัยไทย รายการโปรดที่คุณเลือกไว้
