| ชื่อเรื่อง | : | LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application |
| นักวิจัย | : | Yuan, C. L. , Darmawan, P. , Setiawan, Y. , Lee, Pooi See |
| คำค้น | : | DRNTU::Engineering::Materials::Nanostructured materials. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2549 |
| อ้างอิง | : | Yuan, C. L., Darmawan, P., Setiawan, Y., & Lee, P. S. (2006). LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application. Electrochemical and Solid-State Letters, 9(6), F53-F55. , http://hdl.handle.net/10220/8096 , http://dx.doi.org/10.1149/1.2193069 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Electrochemical and solid-state letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A novel method to fabricate the memory structure of LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric by the pulsed laser deposition method using a rotating target was successfully developed. The average mean size and aerial density of the LaAlO3 nanocrystals are estimated to be about 6 nm and 1.1 x 10^12 cm−2, respectively. Superior performances in terms of a large memory window, long data retention, and robust endurance were observed. |
| บรรณานุกรม | : |
Yuan, C. L. , Darmawan, P. , Setiawan, Y. , Lee, Pooi See . (2549). LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Yuan, C. L. , Darmawan, P. , Setiawan, Y. , Lee, Pooi See . 2549. "LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Yuan, C. L. , Darmawan, P. , Setiawan, Y. , Lee, Pooi See . "LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print. Yuan, C. L. , Darmawan, P. , Setiawan, Y. , Lee, Pooi See . LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.
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