| ชื่อเรื่อง | : | Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing |
| นักวิจัย | : | Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Setiawan, Y. , Hoe, Keat Mun |
| คำค้น | : | DRNTU::Engineering::Materials |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2550 |
| อ้างอิง | : | Tan, E. J., Pey, K. L., Chi, D. Z., Lee, P. S., Setiawan, Y., & Hoe, K. M. (2008). Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing. Journal of the Electrochemical Society, 155(1). , http://hdl.handle.net/10220/8006 , http://dx.doi.org/10.1149/1.2800761 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Journal of the electrochemical society |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | We studied erbium germanosilicide films formed on relaxed p-type Si1−xGex(100) (x = 0–0.3) virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of 500–700°C. Two dimensional X-ray diffraction and pole figure measurements revealed that the silicide films formed were epitaxial Er(Si1−xGex)2−y with orientation relationship Er(Si1−xGex)2−y(1100)- [0001]||Si1−xGex(001)[110] or Er(Si1−xGex)2−y(1100)[0001]||Si1−xGex(001)[110]. Schottky barrier height, Φ(Bp), of the Er(Si1−xGex)2−y/p − Si1−xGex(100) contact was found to decrease from 0.79 to 0.62 eV with increasing Ge (from 0 to 30%), implying a slight increase in its barrier height for electrons, Φ(Bneff), from 0.33 to 0.37 eV |
| บรรณานุกรม | : |
Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Setiawan, Y. , Hoe, Keat Mun . (2550). Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Setiawan, Y. , Hoe, Keat Mun . 2550. "Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Setiawan, Y. , Hoe, Keat Mun . "Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2550. Print. Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Setiawan, Y. , Hoe, Keat Mun . Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2550.
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