| ชื่อเรื่อง | : | Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ |
| นักวิจัย | : | Chen, Xiao Jia , Su, Haibin |
| คำค้น | : | DRNTU::Engineering::Materials::Magnetic materials. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2548 |
| อ้างอิง | : | Chen, X. J., & Su, H. (2005). Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ. Physical Review B, 71. , http://hdl.handle.net/10220/6929 , http://dx.doi.org/10.1103/PhysRevB.71.094512 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Physical review B |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | We have performed systematic studies of the trend of the critical temperature Tc due to both Madelung site potential difference between in-plane oxygen and copper sites ΔVM and interlayer effect in the optimally doped 123 superconductors RBa2Cu3O7−δ. ΔVM is found to decrease with the increase of the trivalent rare-earth ionic radius rR3+. This change enhances the next-nearest-neighbor hopping integral t', which results in the experimentally observed increase of Tc with rR3+. The coherent interlayer single-particle hopping t⊥ has a more profound effect than t' on the nearly linear trend of Tc as a function of rR3+. These results reveal the importance of the electronic origin of the rare-earth ionic size effect on Tc in this family. |
| บรรณานุกรม | : |
Chen, Xiao Jia , Su, Haibin . (2548). Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Chen, Xiao Jia , Su, Haibin . 2548. "Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Chen, Xiao Jia , Su, Haibin . "Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2548. Print. Chen, Xiao Jia , Su, Haibin . Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2548.
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