| ชื่อเรื่อง | : | Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals |
| นักวิจัย | : | Ng, Chi Yung , Chen, Tupei , Yang, Ming , Yang, Jian Bo , Ding, Liang , Li, Chang Ming , Du, A. , Trigg, Alastair David |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2549 |
| อ้างอิง | : | Ng, C. Y., Chen, T. P., Yang, M., Yang, J. B., Ding, L., Li, C. M., et al. (2006). Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals. IEEE Transactions on Electron Devices, 53(4), 663-667. , 0018-9383 , http://hdl.handle.net/10220/6427 , http://dx.doi.org/10.1109/TED.2006.870281 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE transactions on electron devices |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A nonvolatile memory based on silicon nanocrystals (nc-Si) synthesized with very-low-energy Si+ implantation is fabricated, and the memory performance under the programming/erasing of either Fowler-Nordheim (FN)/FN or channel hot electron (CHE)/FN at both room temperature and 85°C is investigated. The CHE programming has a larger memory window, a better endurance, and a longer retention time as compared to FN programming. In addition, the CHE programming yields less stress-induced leakage current than FN programming, suggesting that it produces less damage to the gate oxide and the oxide/Si interface. Detailed discussions on the impact of the programming mechanisms are presented. |
| บรรณานุกรม | : |
Ng, Chi Yung , Chen, Tupei , Yang, Ming , Yang, Jian Bo , Ding, Liang , Li, Chang Ming , Du, A. , Trigg, Alastair David . (2549). Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ng, Chi Yung , Chen, Tupei , Yang, Ming , Yang, Jian Bo , Ding, Liang , Li, Chang Ming , Du, A. , Trigg, Alastair David . 2549. "Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ng, Chi Yung , Chen, Tupei , Yang, Ming , Yang, Jian Bo , Ding, Liang , Li, Chang Ming , Du, A. , Trigg, Alastair David . "Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print. Ng, Chi Yung , Chen, Tupei , Yang, Ming , Yang, Jian Bo , Ding, Liang , Li, Chang Ming , Du, A. , Trigg, Alastair David . Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.
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