| ชื่อเรื่อง | : | Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure |
| นักวิจัย | : | Liu, Yang , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Ng, Chi Yung , Yu, Siu Fung , Li, Zeng Xiang , Yuen, Chau , Zhu, Fu Rong , Tan, M. C. , Fung, Stevenson Hon Yuen |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2550 |
| อ้างอิง | : | Liu, Y., Chen, T. P., Ding, L., Yang, M., Wong, J. I., Ng, C. Y., et al. (2007). Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure. Journal of applied physics, 101, 1-4. , 0021-8979 , http://hdl.handle.net/10220/6425 , http://dx.doi.org/10.1063/1.2713946 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Journal of applied physics |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices. |
| บรรณานุกรม | : |
Liu, Yang , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Ng, Chi Yung , Yu, Siu Fung , Li, Zeng Xiang , Yuen, Chau , Zhu, Fu Rong , Tan, M. C. , Fung, Stevenson Hon Yuen . (2550). Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, Yang , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Ng, Chi Yung , Yu, Siu Fung , Li, Zeng Xiang , Yuen, Chau , Zhu, Fu Rong , Tan, M. C. , Fung, Stevenson Hon Yuen . 2550. "Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, Yang , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Ng, Chi Yung , Yu, Siu Fung , Li, Zeng Xiang , Yuen, Chau , Zhu, Fu Rong , Tan, M. C. , Fung, Stevenson Hon Yuen . "Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2550. Print. Liu, Yang , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Ng, Chi Yung , Yu, Siu Fung , Li, Zeng Xiang , Yuen, Chau , Zhu, Fu Rong , Tan, M. C. , Fung, Stevenson Hon Yuen . Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2550.
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