| ชื่อเรื่อง | : | Design and sensitivity analysis of a new current-mode sense amplifier for low-power SRAM |
| นักวิจัย | : | Do, Anh Tuan , Kong, Zhi Hui , Yeo, Kiat Seng , Low, Jeremy Yung Shern |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2552 |
| อ้างอิง | : | Do, A. T., Kong, Z. H., Yeo, K. S. & Low, Y. S. (2009). Design and Sensitivity Analysis of a New Current-Mode Sense Amplifier for Low-Power SRAM. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 9, 1-1. , 1063-8210 , http://hdl.handle.net/10220/6238 , http://dx.doi.org/10.1109/TVLSI.2009.2033110 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE transactions on very large scale integration (VLSI) systems |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A new current-mode sense amplifier is presented. It extensively utilizes the cross-coupled inverters for both local and global sensing stages, hence achieving ultra low-power and ultra high-speed properties simultaneously. Its sensing delay and power consumption are almost independent of the bit- and data-line capacitances. Extensive post-layout simulations, based on an industry standard 1 V/65-nm CMOS technology, have verified that the new design outperforms other designs in comparison by at least 27% in terms of speed and 30% in terms of power consumption. Sensitivity analysis has proven that the new design offers the best reliability with the smallest standard deviation and bit-error-rate (BER). Four 32 32-bit SRAM macros have been used to validate the proposed design, in comparison with three other circuit topologies. The new design can operate at a maximum frequency of 1.25 GHz at 1 V supply voltage and a minimum supply voltage of 0.2 V. These attributes of the proposed circuit make it a wise choice for contemporary high-complexity systems where reliability and power consumption are of major concerns. |
| บรรณานุกรม | : |
Do, Anh Tuan , Kong, Zhi Hui , Yeo, Kiat Seng , Low, Jeremy Yung Shern . (2552). Design and sensitivity analysis of a new current-mode sense amplifier for low-power SRAM.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Do, Anh Tuan , Kong, Zhi Hui , Yeo, Kiat Seng , Low, Jeremy Yung Shern . 2552. "Design and sensitivity analysis of a new current-mode sense amplifier for low-power SRAM".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Do, Anh Tuan , Kong, Zhi Hui , Yeo, Kiat Seng , Low, Jeremy Yung Shern . "Design and sensitivity analysis of a new current-mode sense amplifier for low-power SRAM."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2552. Print. Do, Anh Tuan , Kong, Zhi Hui , Yeo, Kiat Seng , Low, Jeremy Yung Shern . Design and sensitivity analysis of a new current-mode sense amplifier for low-power SRAM. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2552.
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