ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells
นักวิจัย : Makino, T. , Tuan, N. T. , Sun, Handong , Chia, C. H. , Segawa, Y. , Kawasaki, M. , Ohtomo, A. , Tamura, K. , Koinuma, H.
คำค้น : DRNTU::Science::Physics::Optics and light.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2544
อ้างอิง : Makino, T., Tuan, N. T., Sun, H. D., Chia, C. H., Segawa, Y., Kawasaki, M., et al. (2001). Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells. Applied Physics Letters., 78, 1979. , 0003-6951 , http://hdl.handle.net/%dspace.prefix%/6135 , http://scitation.aip.org.ezlibproxy1.ntu.edu.sg/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000078000014001979000001 , http://dx.doi.org/10.1063/1.1357451
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied Physics Letters.
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

We report on temperature dependence of excitonic photoluminescence (PL) from ZnO/(Mg, Zn)O multiple quantum wells (MQWs). Two kinds of MQWs having different barrier heights grown by laser molecular-beam epitaxy showed significantly different temperature dependences of PL spectra; in ZnO/Mg0.27Zn0.73O MQWs, the PL peak energy at 50–200 K was a monotonically increasing function of temperature, which was opposite to that ascribed by band gap shrinkage. Moreover, spectra taken at 95–200 K encompassed two peaks, both of which originated from recombination of localized excitons. The temperature-induced shift (redshift-blueshift-peak duplication-redshift) At 5–300 K is caused by a change in the exciton dynamics with increasing temperature due to inhomogeneity and the exciton localization effect. On the other hand, the corresponding dependence in ZnO/Mg0.12Zn0.88O MQWs (lower barrier height) was similar to that in bulk II–VI semiconductors.

บรรณานุกรม :
Makino, T. , Tuan, N. T. , Sun, Handong , Chia, C. H. , Segawa, Y. , Kawasaki, M. , Ohtomo, A. , Tamura, K. , Koinuma, H. . (2544). Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Makino, T. , Tuan, N. T. , Sun, Handong , Chia, C. H. , Segawa, Y. , Kawasaki, M. , Ohtomo, A. , Tamura, K. , Koinuma, H. . 2544. "Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Makino, T. , Tuan, N. T. , Sun, Handong , Chia, C. H. , Segawa, Y. , Kawasaki, M. , Ohtomo, A. , Tamura, K. , Koinuma, H. . "Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2544. Print.
Makino, T. , Tuan, N. T. , Sun, Handong , Chia, C. H. , Segawa, Y. , Kawasaki, M. , Ohtomo, A. , Tamura, K. , Koinuma, H. . Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2544.