| ชื่อเรื่อง | : | Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents |
| นักวิจัย | : | Sun, Handong , Clark, Antony H. , Calvez, Stephane , Dawson, M. D. , Shih, D. K. , Lin, H. H. |
| คำค้น | : | DRNTU::Science::Physics::Optics and light. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2548 |
| อ้างอิง | : | Sun, H. D., Clark, A. H., Calvez, S., Dawson M. D., Shih, D. K., Lin, H. H. (2005). Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. Applied Physics Letters, 87(8), 1-3. , 0003-6951 , http://hdl.handle.net/10220/6059 , http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2005&volume=87&issue=8&spage=1&epage=3&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Photoluminescence%20characterization%20of%20midinfrared%20in%20Nx%20As1%2Dx%20%2F%20In0%2E53%20Ga0%2E47%20AsInP%20multiquantum%20wells%20with%20various%20N%20contents&sici. , http://dx.doi.org/10.1063/1.2034119 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied Physics Letters. |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content. |
| บรรณานุกรม | : |
Sun, Handong , Clark, Antony H. , Calvez, Stephane , Dawson, M. D. , Shih, D. K. , Lin, H. H. . (2548). Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Sun, Handong , Clark, Antony H. , Calvez, Stephane , Dawson, M. D. , Shih, D. K. , Lin, H. H. . 2548. "Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Sun, Handong , Clark, Antony H. , Calvez, Stephane , Dawson, M. D. , Shih, D. K. , Lin, H. H. . "Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2548. Print. Sun, Handong , Clark, Antony H. , Calvez, Stephane , Dawson, M. D. , Shih, D. K. , Lin, H. H. . Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2548.
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