| ชื่อเรื่อง | : | Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment |
| นักวิจัย | : | Rofail, Samir S. , Yeo, Kiat Seng |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2540 |
| อ้างอิง | : | Rofail, S. S., & Yeo, K. S. (2000). Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment. IEEE Transactions on Electron Devices, 44(9), 1473-1482. , 0018-9383 , http://hdl.handle.net/10220/4642 , http://dx.doi.org/10.1109/16.622604 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE transactions on electron devices |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | The hybrid-mode operation of deep-submicron LDD pMOSFET’s has been investigated experimentally. Based on the experimental results, analytical models for the threshold voltage, the device currents, the transconductance, and the output conductance were derived. The various current components in this mode of operation were extracted and identified. The effects of independently biasing the source, drain, gate, and body potentials on the device currents and parameters were examined. The bodyinduced-barrier-lowering (BIBL) effect, which is one of the VSB effects and introduced for the first time, has been used to account for the changes in both the threshold voltage and the device currents caused by the forward source-body bias. |
| บรรณานุกรม | : |
Rofail, Samir S. , Yeo, Kiat Seng . (2540). Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Rofail, Samir S. , Yeo, Kiat Seng . 2540. "Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Rofail, Samir S. , Yeo, Kiat Seng . "Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2540. Print. Rofail, Samir S. , Yeo, Kiat Seng . Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2540.
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