| ชื่อเรื่อง | : | Behaviour of fluoride and dissolved silicon in Gouthami Godavari estuarine environment |
| นักวิจัย | : | Sarma, V.V. , Sudhakar, U. , Varaprasad, S.J.D. |
| คำค้น | : | fluorides , silicon , dissolved organic matter , brackishwater environment |
| หน่วยงาน | : | National Institute Of Oceanography (NIO), India |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2536 |
| อ้างอิง | : | Mahasagar, Vol.26; 105-113p. , http://drs.nio.org/drs/handle/2264/2813 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | - |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | The concentrations of fluoride and dissolved silicon in Gouthami-Godavari estuarine region (Andhra Pradesh, India) have been measured as a function of chlorinity during different seasons. Fluoride and dissolved silicon behave conservatively during post-monsoon season. However, during premonsoon season, removal of approximately 16% in case of fluoride and 41% in case of dissolved silicon was found during mixing of sea and river waters. The possible mechanisms for removal of both the elements have been explained. The net annual flux of dissolved silicon has been calculated to be 4.70 x 10 super(5) tons/yr from Godavari River into the Bay of Bengal |
| บรรณานุกรม | : |
Sarma, V.V. , Sudhakar, U. , Varaprasad, S.J.D. . (2536). Behaviour of fluoride and dissolved silicon in Gouthami Godavari estuarine environment.
: National Institute Of Oceanography (NIO), India. Sarma, V.V. , Sudhakar, U. , Varaprasad, S.J.D. . 2536. "Behaviour of fluoride and dissolved silicon in Gouthami Godavari estuarine environment".
: National Institute Of Oceanography (NIO), India. Sarma, V.V. , Sudhakar, U. , Varaprasad, S.J.D. . "Behaviour of fluoride and dissolved silicon in Gouthami Godavari estuarine environment."
: National Institute Of Oceanography (NIO), India, 2536. Print. Sarma, V.V. , Sudhakar, U. , Varaprasad, S.J.D. . Behaviour of fluoride and dissolved silicon in Gouthami Godavari estuarine environment. : National Institute Of Oceanography (NIO), India; 2536.
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