| ชื่อเรื่อง | : | Band gap effects of hexagonal boron nitride using oxygen plasma |
| นักวิจัย | : | Singh, Ram Sevak , Tay, Roland Yingjie , Chow, Wai Leong , Tsang, Siu Hon , Mallick, Govind , Teo, Edwin Hang Tong |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2557 |
| อ้างอิง | : | Singh, R. S., Tay, R. Y., Chow, W. L., Tsang, S. H., Mallick, G., & Teo, E. H. T. (2014). Band gap effects of hexagonal boron nitride using oxygen plasma. Applied Physics Letters, 104(16), 163101-. , http://hdl.handle.net/10220/19603 , http://dx.doi.org/10.1063/1.4872318 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied physics letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing. |
| บรรณานุกรม | : |
Singh, Ram Sevak , Tay, Roland Yingjie , Chow, Wai Leong , Tsang, Siu Hon , Mallick, Govind , Teo, Edwin Hang Tong . (2557). Band gap effects of hexagonal boron nitride using oxygen plasma.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Singh, Ram Sevak , Tay, Roland Yingjie , Chow, Wai Leong , Tsang, Siu Hon , Mallick, Govind , Teo, Edwin Hang Tong . 2557. "Band gap effects of hexagonal boron nitride using oxygen plasma".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Singh, Ram Sevak , Tay, Roland Yingjie , Chow, Wai Leong , Tsang, Siu Hon , Mallick, Govind , Teo, Edwin Hang Tong . "Band gap effects of hexagonal boron nitride using oxygen plasma."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print. Singh, Ram Sevak , Tay, Roland Yingjie , Chow, Wai Leong , Tsang, Siu Hon , Mallick, Govind , Teo, Edwin Hang Tong . Band gap effects of hexagonal boron nitride using oxygen plasma. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.
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