| ชื่อเรื่อง | : | Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure |
| นักวิจัย | : | Ding, Y. , Fan, Weijun , Ma, B. S. , Xu, D. W. , Yoon, Soon Fatt , Liang, S. , Zhao, L. J. , Wasiak, M. , Czyszanowski, T. , Nakwaski, W. |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2553 |
| อ้างอิง | : | Ding, Y., Fan, W., Ma, B. S., Xu, D. W., Yoon, S. F., Liang, S., Zhao, L. J., Wasiak, M., Czyszanowski, T.,& Nakwaski, W. (2010). Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure. Journal of applied physics, 108, 073111. , 0021-8979 , http://hdl.handle.net/10220/18171 , http://dx.doi.org/10.1063/1.3490236 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Journal of applied physics |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Microphotoluminescence -PL investigation has been performed at room temperature on InAs quantum dot QD vertical cavity surface emitting laser VCSEL structure in order to characterize the QD epitaxial structure which was designed for 1.3 m wave band emission. Actual and precise QD emission spectra including distinct ground state GS and excited state ES transition peaks are obtained by an edge-excitation and edge-emission EEEE -PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE -PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE -PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained. |
| บรรณานุกรม | : |
Ding, Y. , Fan, Weijun , Ma, B. S. , Xu, D. W. , Yoon, Soon Fatt , Liang, S. , Zhao, L. J. , Wasiak, M. , Czyszanowski, T. , Nakwaski, W. . (2553). Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ding, Y. , Fan, Weijun , Ma, B. S. , Xu, D. W. , Yoon, Soon Fatt , Liang, S. , Zhao, L. J. , Wasiak, M. , Czyszanowski, T. , Nakwaski, W. . 2553. "Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ding, Y. , Fan, Weijun , Ma, B. S. , Xu, D. W. , Yoon, Soon Fatt , Liang, S. , Zhao, L. J. , Wasiak, M. , Czyszanowski, T. , Nakwaski, W. . "Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2553. Print. Ding, Y. , Fan, Weijun , Ma, B. S. , Xu, D. W. , Yoon, Soon Fatt , Liang, S. , Zhao, L. J. , Wasiak, M. , Czyszanowski, T. , Nakwaski, W. . Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2553.
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