| ชื่อเรื่อง | : | Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature |
| นักวิจัย | : | Ng, T. K. , Yoon, Soon Fatt , Wang, S. Z. , Loke, Wan Khai , Fan, Weijun |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2545 |
| อ้างอิง | : | Ng, T. K., Yoon, S. F., Wang, S. Z., Loke, W. K., & Fan, W. (2002). Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature. Journal of vacuum science & technology B : Microelectronics and nanometer structures, 20(3), 964. , 0734-211X , http://hdl.handle.net/10220/18004 , http://dx.doi.org/10.1116/1.1477425 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Journal of vacuum science & technology B : Microelectronics and nanometer structures |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | The photoluminescence (PL) characteristics of GaInNAs quantum wells (QWs) after high-temperature postgrowth annealing were studied. The QWs were grown using a radio-frequency nitrogen plasma source in conjunction with a solid-source molecular-beam epitaxy system. It was found that annealing at high temperature (840 °C) and long duration (10min) results in significant improvements to the PL characteristics of the GaInNAs QWs. The shift of the GaInNAs and GaInAs PL peak wavelength resulting from high-temperature annealing is dependent on the In composition. It is suggested that the dominant mechanisms that give rise to the blueshift of the PL peak wavelength in GaInNAs QWs with high-In composition are residual-strain-induced GaAs/ GaInNAs/GaAs interface interdiffusion, and defect-assisted diffusion-related effects, both of which originate from the growth process. |
| บรรณานุกรม | : |
Ng, T. K. , Yoon, Soon Fatt , Wang, S. Z. , Loke, Wan Khai , Fan, Weijun . (2545). Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ng, T. K. , Yoon, Soon Fatt , Wang, S. Z. , Loke, Wan Khai , Fan, Weijun . 2545. "Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ng, T. K. , Yoon, Soon Fatt , Wang, S. Z. , Loke, Wan Khai , Fan, Weijun . "Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2545. Print. Ng, T. K. , Yoon, Soon Fatt , Wang, S. Z. , Loke, Wan Khai , Fan, Weijun . Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2545.
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