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Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects
นักวิจัย : Lee, Byunghoon , Jeon, Haseok , Kwon, Kee-Won , Lee, Hoo-Jeong
คำค้น : DRNTU::Engineering::Materials::Metallic materials
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2556
อ้างอิง : Lee, B., Jeon, H., Kwon, K. W., & Lee, H. J. (2013). Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects. Acta Materialia, 61(18), 6736-6742. , 1359-6454 , http://hdl.handle.net/10220/16535 , http://dx.doi.org/10.1016/j.actamat.2013.07.043 , 174653
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Acta materialia
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

This study explored the possibility of employing a bi-layer barrier of electroless-plated Ni(P)/thin Cu layers in a Cu/Sn/Cu bonding structure for three-dimensional interconnects. Our materials analysis revealed that the bi-layer barrier served effectively as a diffusion barrier and prevented full-scale materials interaction for temperatures higher than 300 °C. Such suppression of an intermetallic compound reaction and limiting Cu diffusion led to the formation of a rod-shaped Cu6Sn5 compound, rendering a unique microstructure of ductile Sn embedded with strong Cu6Sn5 rods. Our mechanical characterization using lap-shear testing and fracture analysis revealed that the sample with such a microstructure displayed a high bonding strength with some ductility, a desirable combination for high mechanical reliability.

บรรณานุกรม :
Lee, Byunghoon , Jeon, Haseok , Kwon, Kee-Won , Lee, Hoo-Jeong . (2556). Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Lee, Byunghoon , Jeon, Haseok , Kwon, Kee-Won , Lee, Hoo-Jeong . 2556. "Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Lee, Byunghoon , Jeon, Haseok , Kwon, Kee-Won , Lee, Hoo-Jeong . "Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print.
Lee, Byunghoon , Jeon, Haseok , Kwon, Kee-Won , Lee, Hoo-Jeong . Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.