| ชื่อเรื่อง | : | Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping |
| นักวิจัย | : | Wang, Zhongrui , Zhu, W. G. , Du, A. Y. , Wu, L. , Fang, Z. , Tran, Xuan Anh , Liu, W. J. , Zhang, K. L. , Yu, Hongyu |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | Wang, Z., Zhu, W. G., Du, A. Y., Wu, L., Fang, Z., Tran, X. A., et al. (2012). Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping. IEEE transactions on electron devices, 59(4), 1203-1208. , 0018-9383 , http://hdl.handle.net/10220/13474 , http://dx.doi.org/10.1109/TED.2012.2182770 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE transactions on electron devices |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Atomic layer deposited (ALD) HfO2 resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated. Through comparative experiments, we find that appropriate deposition techniques and annealing conditions lead to self-compliance. The forming-free behavior originates from the oxygen deficiency due to the metal doping layer. High uniformity, by first-principle calculation, is caused by Ge doping in the HfO2, which lowers the oxygen-vacancy formation energy. |
| บรรณานุกรม | : |
Wang, Zhongrui , Zhu, W. G. , Du, A. Y. , Wu, L. , Fang, Z. , Tran, Xuan Anh , Liu, W. J. , Zhang, K. L. , Yu, Hongyu . (2555). Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Wang, Zhongrui , Zhu, W. G. , Du, A. Y. , Wu, L. , Fang, Z. , Tran, Xuan Anh , Liu, W. J. , Zhang, K. L. , Yu, Hongyu . 2555. "Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Wang, Zhongrui , Zhu, W. G. , Du, A. Y. , Wu, L. , Fang, Z. , Tran, Xuan Anh , Liu, W. J. , Zhang, K. L. , Yu, Hongyu . "Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Wang, Zhongrui , Zhu, W. G. , Du, A. Y. , Wu, L. , Fang, Z. , Tran, Xuan Anh , Liu, W. J. , Zhang, K. L. , Yu, Hongyu . Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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