| ชื่อเรื่อง | : | Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field |
| นักวิจัย | : | Fan, Weijun |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | Fan, W. (2012). Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field. 2012 7th International Conference on Electrical and Computer Engineering. , http://hdl.handle.net/10220/11842 , http://dx.doi.org/10.1109/ICECE.2012.6471559 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | - |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A 10-band k.p formula including electric field effect is introduced to calculate the band structures and optical gain of multilayer dilute nitride semiconductors. The band structure and optical gain of 70 Å In0.37Ga0.63As0.975N0.025 compressive strain quantum well with tensile strained 200 Å GaAs0.997N0.003 barrier with emission wavelength at 1.3 um are investigated. Under an electric field of 100 keV/cm, the fundamental interband transition Stark shift is calculated, the red shift is about 140.5 meV. The peak gain is greatly decreased from 4396 cm-1 to 865 cm-1 for carrier concentration of 8×1018 cm-3. If considering dielectric effect, the effective electric field is 7.22 keV/cm, the Stark shift is greatly depressed to 1.6 meV and peak gain is slightly decreased to 4226 cm-1. |
| บรรณานุกรม | : |
Fan, Weijun . (2555). Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Fan, Weijun . 2555. "Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Fan, Weijun . "Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Fan, Weijun . Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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