| ชื่อเรื่อง | : | Selective modification of band gap in GaInNAs/GaAs structures by quantum well intermixing |
| นักวิจัย | : | Macaluso, Roberto , Sun, Handong , Dawson, M. D. , Robert, F. , Bryce, A. C. , Marsh, J. H. , Riechert, H. |
| คำค้น | : | DRNTU::Science::Physics::Optics and light. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2546 |
| อ้างอิง | : | Macaluso, R., Sun, H. D., Dawson, M. D., Robert, F., Bryce, A. C., Marsh, J. H., et al. (2003). Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing. Applied Physics Letters, 82(24), 4259-4261. , 0003-6951 , http://hdl.handle.net/10220/6046 , http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2003&volume=82&issue=24&spage=4259&epage=&aulast=Macaluso&aufirst=%20R&auinit=&title=Applied%20Physics%20Letters&atitle=Selective%20modification%20of%20band%20gap%20in%20GaInNAs%2FGaAs%20structures%20by%20quantum%2Dwell%20intermixing%2E&sici. , http://dx.doi.org/10.1063/1.1583865. |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied Physics Letters. |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | We report an investigation of selective quantum-well intermixing (QWI) in 1.3-mum GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO2-capped samples, while uncapped and SiO2-capped samples by plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications. |
| บรรณานุกรม | : |
Macaluso, Roberto , Sun, Handong , Dawson, M. D. , Robert, F. , Bryce, A. C. , Marsh, J. H. , Riechert, H. . (2546). Selective modification of band gap in GaInNAs/GaAs structures by quantum well intermixing.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Macaluso, Roberto , Sun, Handong , Dawson, M. D. , Robert, F. , Bryce, A. C. , Marsh, J. H. , Riechert, H. . 2546. "Selective modification of band gap in GaInNAs/GaAs structures by quantum well intermixing".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Macaluso, Roberto , Sun, Handong , Dawson, M. D. , Robert, F. , Bryce, A. C. , Marsh, J. H. , Riechert, H. . "Selective modification of band gap in GaInNAs/GaAs structures by quantum well intermixing."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2546. Print. Macaluso, Roberto , Sun, Handong , Dawson, M. D. , Robert, F. , Bryce, A. C. , Marsh, J. H. , Riechert, H. . Selective modification of band gap in GaInNAs/GaAs structures by quantum well intermixing. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2546.
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