| ชื่อเรื่อง | : | The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers |
| นักวิจัย | : | Goh, Wang Ling , Raza, S. H. , Montgomery, J. H. , Armstrong, B. M. , Gamble, H. S. |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2542 |
| อ้างอิง | : | Goh, W. L., Raza, S. H., Montgomery, J. H., Armstrong, B. M., & Gamble, H. S. (1999). The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers. IEEE Electron Device Letters, 20(5), 212-214. , 0741-3106 , http://hdl.handle.net/10220/5989 , http://dx.doi.org/10.1109/55.761018 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE electron device letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Results are reported on the performance of diffused p+n diode structures manufactured on a novel silicon-on-metalon-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent characteristics with an exponential current–voltage (I V ) relationship over nine orders of magnitude and an ideality factor of 1.005, under forward bias conditions. The reverse leakage current is low with a minority carrier lifetime of typically 500 µs. The diodes show no evidence of stress induced defects or degraded performance due to W migration during processing. The SMI substrate is therefore shown to be compatible with standard manufacturing processes. |
| บรรณานุกรม | : |
Goh, Wang Ling , Raza, S. H. , Montgomery, J. H. , Armstrong, B. M. , Gamble, H. S. . (2542). The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Goh, Wang Ling , Raza, S. H. , Montgomery, J. H. , Armstrong, B. M. , Gamble, H. S. . 2542. "The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Goh, Wang Ling , Raza, S. H. , Montgomery, J. H. , Armstrong, B. M. , Gamble, H. S. . "The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2542. Print. Goh, Wang Ling , Raza, S. H. , Montgomery, J. H. , Armstrong, B. M. , Gamble, H. S. . The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2542.
|
ridm@nrct.go.th ระบบคลังข้อมูลงานวิจัยไทย รายการโปรดที่คุณเลือกไว้
