| ชื่อเรื่อง | : | AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process |
| นักวิจัย | : | Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Owen, Man Hon Samuel , Liu, Wei , Chi, Dong Zhi , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2556 |
| อ้างอิง | : | Liu, X., Zhan, C., Chan, K. W., Owen, M. H. S., Liu, W., Chi, D. Z., et al. (2013). AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process. Japanese journal of applied physics, 52, 04CF06-. , http://hdl.handle.net/10220/17291 , http://dx.doi.org/10.7567/JJAP.52.04CF06 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Japanese journal of applied physics |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing LGD of 20 m achieved an off-state breakdown voltage VBR of 1400 V and an on-state resistance Ron of 22m cm2. This is the highest VBR achieved so far for gold-free AlGaN/GaN MOS-HEMTs. In addition, high on/off current ratio Ion=Ioff of 109 and low gate leakage current IG of 10 11 A/mm were also obtained. |
| บรรณานุกรม | : |
Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Owen, Man Hon Samuel , Liu, Wei , Chi, Dong Zhi , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia . (2556). AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Owen, Man Hon Samuel , Liu, Wei , Chi, Dong Zhi , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia . 2556. "AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Owen, Man Hon Samuel , Liu, Wei , Chi, Dong Zhi , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia . "AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print. Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Owen, Man Hon Samuel , Liu, Wei , Chi, Dong Zhi , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia . AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.
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