| ชื่อเรื่อง | : | A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode |
| นักวิจัย | : | Liu, W. J. , Tran, Xuan Anh , Yu, Hongyu , Sun, Xiaowei |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2556 |
| อ้างอิง | : | Liu, W. J., Tran, X. A., Yu, H., & Sun, X. (2013). A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode. ECS solid state letters, 2(5), Q35-Q38. , http://hdl.handle.net/10220/13176 , http://dx.doi.org/10.1149/2.006305ssl |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | ECS solid state letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A self-rectifying unipolar RRAM based on HfOx dielectrics using highly doped n-type germanium substrate as the bottom electrode is proposed for the first time. The RRAM cells exhibit a stable unipolar resistive switching behavior. Owning to Schottky barrier between defect states in HfOx layer and n-Ge substrate, RRAM cells possess a self-rectifying behavior in LRS which eliminates the read-out errors induced by leakage current paths in cross-bar array structure. The demonstrated RRAM device shows high ON/OFF ratio (>5 × 102 @ 0.5 V), and its effective Schottky barrier height is also addressed. The demonstrated HfOx-based RRAM devices provide a promising candidate as non-volatile memory devices using Ge-based technology. |
| บรรณานุกรม | : |
Liu, W. J. , Tran, Xuan Anh , Yu, Hongyu , Sun, Xiaowei . (2556). A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, W. J. , Tran, Xuan Anh , Yu, Hongyu , Sun, Xiaowei . 2556. "A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, W. J. , Tran, Xuan Anh , Yu, Hongyu , Sun, Xiaowei . "A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print. Liu, W. J. , Tran, Xuan Anh , Yu, Hongyu , Sun, Xiaowei . A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.
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