| ชื่อเรื่อง | : | Effect of Ti alloying in nickel silicide formation |
| นักวิจัย | : | Setiawan, Y. , Lee, Pooi See , Tan, C. W. , Pey, Kin Leong |
| คำค้น | : | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2548 |
| อ้างอิง | : | Setiawan, Y., Lee, P. S., Tan, C. W., & Pey, K. L. (2006). Effect of Ti alloying in nickel silicide formation. Thin Solid Films, 504(1-2), 153-156. , 0040-6090 , http://hdl.handle.net/10220/10500 , http://dx.doi.org/10.1016/j.tsf.2005.09.066 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Thin solid films |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant NiSi phase with some NiSi2 grains facetted in (111) plane was observed. A different mechanism occurred for the sample with minimal oxygen contamination where Ni3Si2 was found to be stable up to 900 °C. Nevertheless, Ti addition has delayed the silicidation reaction to 600 °C. |
| บรรณานุกรม | : |
Setiawan, Y. , Lee, Pooi See , Tan, C. W. , Pey, Kin Leong . (2548). Effect of Ti alloying in nickel silicide formation.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Setiawan, Y. , Lee, Pooi See , Tan, C. W. , Pey, Kin Leong . 2548. "Effect of Ti alloying in nickel silicide formation".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Setiawan, Y. , Lee, Pooi See , Tan, C. W. , Pey, Kin Leong . "Effect of Ti alloying in nickel silicide formation."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2548. Print. Setiawan, Y. , Lee, Pooi See , Tan, C. W. , Pey, Kin Leong . Effect of Ti alloying in nickel silicide formation. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2548.
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